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Hardware security concerns such as intellectual property (IP) piracy and hardware Trojans have triggered research into circuit protection and malicious logic detection from various design perspectives. In this article, emerging technologies are investigated by leveraging their unique properties for applications in the hardware security domain. Security, for(More)
Negative-bias temperature instability (NBTI) on high-k metal-gate SiGe p-channel MOSFETs has been examined. SiGe p-MOSFETs shows reduced interface states and enhanced NBTI reliability compared to their Si p-channel control devices as evidenced by experimental data. Impact of NBTI reliability on digital and RF circuits has been also examined using extracted(More)
—Hardware security concerns such as IP piracy and hardware Trojans have triggered research into circuit protection and malicious logic detection from various design perspectives. In this paper, emerging technologies are investigated by leveraging their unique properties for applications in the hardware security domain. Three example circuit structures(More)
Emerging devices have been designed and fabricated to extend Moore's Law. While the benefits over traditional metrics such as power, energy, delay, and area certainly apply to emerging device technologies, new devices may offer additional benefits in addition to improvements in the aforementioned metrics. In this sense, we consider how new transistor(More)
Security and energy are considered as the most important parameters for designing and building a computing system nowadays. Today's attacks target different layers of the computing system (i.e. software and hardware). Introduction of new transistor technologies to the integrated circuits design is beneficial, especially for low energy requirements. The new(More)
This work uses the mutual temperature compensation of threshold voltage and carrier mobility to establish the optimum overdrive voltage for a MOS transistor. A fully differential SAR ADC is designed using 65 nm technology with improved temperature and process stability and can work under supply voltage of 300 mV. Simulation results show that under VDD of(More)
This paper investigates the electrothermal stress- induced performance degradation of a cascode low-noise amplifier (LNA) built using InGaP/GaAs heterojunction bipolar transistors (HBTs). Changes in device characteristics due to the electrothermal stress were examined experimentally. At the moderate base-emitter voltage, the base current increases and(More)