Jiangjiang Gu

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The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A wellcontrolled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V(More)
Recently, encouraging progress has been made on surface-channel inversion-mode In-rich InGaAs NMOSFETs with superior drive current, high transconductance and minuscule gate leakage, using atomic layer deposited (ALD) high-k dielectrics. Although gate-last process is favorable for high-k/III–V integration, high-speed logic devices require a self-aligned(More)
In this paper, we reported for the first time that Au(III) decorated carbon dot cluster (Au(III)/CDC) was synthesized to detect glutathione through fluorescence "off-on" approach. The "off" process was realized by the introduction of Au(III) on luminescent carbon dots (CDs), which formed the complex of Au(III)/CDC and quenched the fluorescence of CDs(More)
Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of(More)
We have characterized phase coherence length, spin-orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measurements. Weak localization measurements reveal a phase coherence length of ~50 nm at T = 400 mK for a few-layer MoS2 film, decreasing as T(-1/2) with increased temperatures. Weak(More)
We study the channel width scaling of back-gated MoS2 metal–oxide–semiconductor field-effect transistors from 2 μm down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a(More)
Planar and 3-dimensional (3D) buried-channel InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have been experimentally demonstrated at deep-submicron gate lengths. The effect of (NH4)2 S passivation with different concentrations (20%, 10%, or 5%) on the off-state performance of these devices has been systematically studied. 10% (NH4)2 S(More)
metal-oxide-semiconductor field-effect transistors Mengwei Si, Jiangjiang J. Gu, Xinwei Wang, Jiayi Shao, Xuefei Li, Michael J. Manfra, Roy G. Gordon, and Peide D. Ye School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA Department of Chemistry and Chemical Biology, Harvard(More)
Surface-enhanced Raman scattering (SERS) has been intensely researched for many years as a potential technique for highly sensitive detection. This work, through the reduction of HAuCl(4) with pyrrole in aqueous solutions, investigated a facile one-pot synthesis of flower-like Au nanoparticles with rough surfaces. The formation process of the Au nanoflowers(More)
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher oncurrent, transconductance, and effective mobility due to stronger(More)