Jian Fu Zhang

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High-κ stacks have been used in the 20-nm generation of floating gate (FG) flash memory cells as the interpoly dielectric (IPD). However, electron trapping in high-κ materials remains a(More)
High density of electron trapping in high-κ intergate dielectric (IGD) materials remains a major concern for planar memory cells with either poly-Si or hybrid floating gates (FGs). In this(More)