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In graphene-based field-effect transistors (graphene FETs), the carrier channel mobility is strongly influenced by substrate and gate dielectric materials. In this paper, we theoretically investigated the carrier channel mobility for the graphene-FET. Surface phonon (SP) scattering, screened Coulomb scattering, acoustic phonon and optical phonon scattering(More)
In this paper, the carrier mobility in graphene nanoribbons(GNRs) is studied. The total carrier mobility calculation includes four scattering mechanisms: surface polar phonons (SPP) scattering, intrinsic acoustic phonon scattering, line-edge roughness scattering, and Coulomb scattering. Carrier SPP scattering rates for five high-κ dielectric(More)
The band structure of GNM is studied using TB method. It is found that some surface states appear in the vicinity of the Fermi levels. The electron might be trapped on these surface states due to very large effective mass. The increase of the effective bandgap of GNM as the increase of the radius of the nanohole, may be responsible for the increase of(More)
GNR (Graphene NanoRibbon) Tunneling-FETs (GNR-TFETs) are simulated using a Non-Equilibrium Green's Function (NEGF) approach using Extended Hiickel Theory (EHT)-based Hamiltonian. By comparing performance of ribbons with different bandgaps, it is shown that reducing source/drain doping and operating voltage enables low voltage operation of GNR-TFETs with a(More)
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