Jia-Le Xia

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This work is to calculate the dc characteristics and investigate the internal quantum efficiencies of &#x03B2;-FeSi<sub>2</sub>-based DH LED and AlGaAs/GaAs DH LED by analytical methods. The internal quantum efficiencies are decreased as the applied forward-bias voltages are increased. When the intrinsic layer thicknesses and doping concentrations are(More)
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