Jhen-Kai Sun

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In this study, low temperature fabrication of an amorphous InGaZnO thin-film transistor (a-IGZO TFT) was demonstrated. The maximum process temperature was 200 &#x00B0;C. The gate dielectric was a sol-gel SiO<sub>2</sub> film while the channel layer was a sputtered a-IGZO semiconductor. The optimal sol-gel film for gate dielectric application was obtained by(More)
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