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Inductively coupled plasma (ICP) etching of GaAs, GaP, and InP is reported as a function of plasma chemistry, chamber pressure, rf power, and source power. Etches were characterized in terms of rate… (More)
We studied dry etching of AlGaAs and InGaP in a planar inductively coupled BCl3 plasma. The process parameters were planar ICP source power (0–500 W), reactive ion etching (RIE) chuck power (0–150… (More)
A parametric study of etch rates and surface morphologies of In-containing compound semiconductors (InP, InGaAs, InGaAsP, InAs and AlInAs) obtained by BClj-based Inductively Coupled Plasmas is… (More)
Etch rates for InGaP and AlGaP are examined under electron cyclotron resonance (ECR) conditions in Cl2/Ar, BCl3/Ar, BCl3/N2, ICl/Ar, and IBr/Ar discharges. All the plasmas except IBr/Ar provide rapid… (More)
BC13, with addition of Nz, Ar or Hz, is found to provide smooth anisotropic pattern transfer in GaAs, GaN, GaP, GaSb and AIGriAs under Inductively Coupled Plasma conditions, Maxima in the etch rates… (More)
The etch rate of bulk ZnO in Cl2/Ar high density plasmas was found to be thermally activated with an activation energy of ∼0.31 eV at 200 °C).
Abstract A BCl 3 /Ne plasma chemistry was used to etch Ga-based (GaAs, AlGaAs, GaSb) and In-based (InGaP, InP, InAs and InGaAsP) compound semiconductors in a planar inductively coupled plasma (ICP)… (More)
Abstract Inductively coupled plasma (ICP) etching of all of the main III–V compound semiconductors is reported as a function of source and chuck power, pressure and gas additive (Ar, N 2 , H 2 ) in… (More)
A parametric study of the etch characteristics of Ga-based (GaAs, GaSb, and AlGaAs) and In-based (InGaP, InP, InAs, and InGaAsP) compound semiconductors in BCl3/Ar planar inductively coupled plasmas… (More)