Jer-Lin Su

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In this paper, the characteristics of InGaP/GaAs collector-up (C-up) pnp and npn heterojunction bipolar transistors (HBTs) with the graded InGaAs base and the nonuniform doped collector are demonstrated, and the performances as well as the reliability of the novel HBTs have been compared with the conventional InGaP/GaAs HBTs with various collector(More)
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