Jeong Tak Moon

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Presently, Sn-Ag-Cu (SAC) solders are most commonly used as the interconnect materials in the semiconductor package. However, their thermal fatigue and drop impact resistant properties depends on the Ag content and therefore, most semiconductor package assemblers are forced to implement multiple SAC alloys depending on intended performance. Sn-xAg-Cu(More)
Recently Silver (Ag) wire has drawn attention to the packaging industry because of the bonding quality and long term reliability concerns with the Cu and Pd coated wire. Ag wire has low cost, high thermal and electrical conductivity as compared to Au while their mechanical properties such as hardness, elongation and breaking load are similar to Au. In the(More)
Thermosonic wire bonding is a well-known process which combines heat, ultrasonic energy and force to bond small wires to complete an electrical path from a metalized surface on a microchip to another metalized surface on the substrate of the circuit and the bonding occurs through the process of atomic diffusion. The bonding wire materials presently used in(More)
Recently Gold price is increased much higher. So Copper wire as low cost solution, is highlighted in various package groups. And some packages having low-pin count of thick size wire, have already been succeeded in mass production using Copper wire. If high Gold price is being kept continuously, speed of conversion for Copper wire will be accelerated.
Various Au bonding wires which have different diameters from 25 um to 12 um, and purity of 2N and 4N are used for studying possible problems in ultra fine wire bonding. As wire diameter gets finer, grain size gets finer and portion of <111> direction in wire texture is increased due to high working ratio. Moreover, as wire diameter gets finer,(More)
This paper presents the microstructures and electrochemical properties of Si-Ti-Ni alloys of various compositions prepared by a rapid solidification process. Si-15Ti-(0-25 at%)Ni alloy ingots prepared by arc-melting was melt-spun to produce thin strip of -15 Om thickness. The Si-Ni-Ti alloy electrode were fabricated by mixing the active powdered materials(More)
The rapidly solidified Si-xTiNi (x = 0.2-0.45) alloy ribbons were fabricated via melt spinning process. The thickness of the melt-spun ribbons was about 12.5 microm, and the sound section was selected for the experiment. The microstructures of the ribbons were analyzed using XRD, FE-SEM, and HR-TEM: The primary silicon particles of 30 nm-100 n min diameter(More)
The phase change due to varying content of titanium in Si-Ni-xTi alloys and its effect on the electrochemical behavior has been investigated. Specimens were prepared by melt-spinning to reduce the microstructure scale. Results showed that silicon particles of 50-100 nm diameter and dendrites of somewhat larger scale were formed in the Si-Ni-Ti alloys(More)
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