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A new CMOS fully differential bandpass amplifier (BPA) based on the structure of a transresistance (Rm) amplifier and capacitor is proposed and analysed. In this design, the Rm amplifier is realised by a simple inverter with tunable shunt-shunt feedback MOS resistor and tunable negative resistance realised by crosscoupled MOS transistors in parallel with a(More)
A new automated permuting capacitor device (APCD) for calibration of inductive voltage dividers (IVDs) with four-terminal-pair definition was designed and tested. The permuting capacitors composed of 11-SMD capacitors were housed in a bulk metal in a symmetrical arrangement. Thus, the APCD is compact and the temperature of the APCD could be controlled(More)
One chip solution for SMPS (switch mode power supply) has been drawing great attention of the designers with its green mode standby power and high efficiency in the AC-DC adaptor and LED lighting applications. The UHV (ultra-high voltage) foundry process, which enables the integration solution for green compliance SMPS, is proposed in this paper. The(More)
A mathematical method of modeling the gate leakage current IG is presented in this work. Both the shallow trench isolation effect and the source drain extension effect on IG are included. With suitably chosen transistor dimensions the parameter extraction can be performed with the devices' drawn size, the effective device length and width is not necessary(More)
The effect of partially undoped poly-silicon gate above the drift region in P-lateral double-diffused MOS (P-LDMOS) Transistors is investigated. Experiment results show that it can improve the off-state leakage current and reduce the on-state resistance. For hot carrier performance, this structure induces a higher initial current shift due to less vertical(More)
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