Jeng Gong

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A mathematical method of modeling the gate leakage current IG is presented in this work. Both the shallow trench isolation effect and the source drain extension effect on IG are included. With suitably chosen transistor dimensions the parameter extraction can be performed with the devices' drawn size, the effective device length and width is not necessary(More)
One chip solution for SMPS (switch mode power supply) has been drawing great attention of the designers with its green mode standby power and high efficiency in the AC-DC adaptor and LED lighting applications. The UHV (ultra-high voltage) foundry process, which enables the integration solution for green compliance SMPS, is proposed in this paper. The(More)
The effect of partially undoped poly-silicon gate above the drift region in P-lateral double-diffused MOS (P-LDMOS) Transistors is investigated. Experiment results show that it can improve the off-state leakage current and reduce the on-state resistance. For hot carrier performance, this structure induces a higher initial current shift due to less vertical(More)
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