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Two-dimensional ultrasonic imaging is demonstrated by using acoustic nanowaves. With a 14 nm acoustic wavelength, both axial and transverse resolutions of a few tens of nanometers are thus achieved. This ultrasonic-based nondestructive technique not only images but also reconstructs the subsurface nanostructures including the depth positions of the buried(More)
This study examined the correlation between the off-state leakage current and dynamic on-resistance (RON) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The RON transients in a Schottky-gate HFET (SGHFET) and metal-insulator-semiconductor HFET (MISHFET) were(More)
The thermal stability and reliability of AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrates with a 2 μm-thick copper interconnection (Cu-INTC) metal were evaluated. The use of metallic copper as a conducting metal has the advantages of higher thermal conductivity, low cost and low sheet resistance. For comparison, traditional gold metal(More)
T his special issue spawned from mainly the motivation used by the scientific community in regard to potential applications of ZnO to electronic and optoelec-tronic devices which seemingly are centering about device applications already addressed by GaN to a large extent. The late Dr. Cole W. Litton (Fig. 1) successfully made the case that a small group of(More)
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