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Gate oxide breakdown is analyzed under very fast transmission line pulsed (VFTLP) stress, using different pulse-rise times and-widths. The switching of oxide behavior pre-and post-breakdown occurs in tenths of a nanosecond and it shows reproducible voltage and current characteristics. The total stress and time-dependent-dielectric-breakdown (TDDB) during… (More)
Physical failure observation is critical in determining the root-cause of ESD and EOS failures that may be due to circuit design weaknesses, product assembly shortcomings or electrical testing methodology issues. The insight gained from various physical analysis tools is instrumental in the product or system re-design or corrective action in the electrical… (More)
This paper reviews the progress in testing standards, characterization methods as well as protection techniques against the Charge Device Model (CDM) ESD event. The paper also discusses recent development trends in this field.