Jean-Jacques Hajjar

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Gate oxide breakdown is analyzed under very fast transmission line pulsed (VFTLP) stress, using different pulse-rise times and-widths. The switching of oxide behavior pre-and post-breakdown occurs in tenths of a nanosecond and it shows reproducible voltage and current characteristics. The total stress and time-dependent-dielectric-breakdown (TDDB) during(More)
Mn2+ added to the inner bathing solution of frog skin caused a transient increase in potential difference (PD) and a decrease in total skin conductance and mannitol influx. Net Na flux and short-circuit current (Is. c.) were also reduced, the isotopic net flux being reduced more than Is. c. This observed discrepancy appears to be the result of Cl- retention(More)
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