Jean-Christophe Crebier

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This paper deals with the design and the realization of an integrated isolated HF dc-to-dc converter for low-voltage and low-power conditioning applications (3.3 V and 1 W) including galvanic isolation. It is based on the 3-D integration of several elementary silicon dies in which essential components such as the inverter, the rectifier, the HF transformer,(More)
This article analyzes the effects of parasitic capacitances in the series connection of IGBT, which exist naturally due to gate driver and power circuit geometry. Two solutions, that can be combined, are proposed to minimize these effects in order to achieve a better voltage balancing. The first one is based on gate driver self-powering technique. The(More)
3D packaging and hybrid heterogeneous integration are currently attracting considerable interest in the literature. In most publications, the power dies and their respective gate drivers are interconnected using flex or PCB layers. Apart from a few exceptions, packaging is mainly based on separate power and driver dies, focusing on improving the performance(More)
This paper deals with the design, the realization and the characterization of an integrated converter for low voltage and low power, isolated applications (3.3 V, 1 W). It is based on the association of two generic silicon dies performing DC to AC and AC to DC operations. The power dies are designed in CMOS technology and operate at high frequency (1 MHz)(More)
This paper deals with the advantages and drawbacks using complementary MOS structures in power converter. Approaching from the common-mode conducted electromagnetic interference (EMI) perspective, this paper shows, at first, how beneficial the complementary structures are. Experimental and simulation results underline the specific behavior of such(More)
This study deals with the power electronics packaging and the needs for additional knowledge about electrical pressed contact behavior. For this, a measure bench has been realized. It is able to characterize the pressed interface between a metal electrode and a power chip as a function of the clamping force (08000N) and the temperature (up to 100°C). First(More)
This paper presents an adaptive gate drive circuit to provide a safer and more efficient control of Wide Bandgap Devices (WBD). The gate drive circuit fabricated in AMS0.35μm HV CMOS technology has an adaptive output impedance for optimal turn-on/off driving conditions and a gate side power transistor switching transition detection. Its impedance can(More)