Jay Im

Learn More
In this paper we investigated the interfacial delamination of through silicon via (TSV) structures under thermal cycling or processing. First finite element analysis (FEA) was used to evaluate the thermal stresses and the driving force of TSV delamaination. Then, the modeling results were validated by analytical solutions of the crack driving force deduced(More)
Mechanism for resistive switching in an oxide-based electrochemical metallization memory Appl. The role of eddy currents and nanoparticle size on AC magnetic field–induced reflow in solder/magnetic nanocomposites J. Characterization of thermal stresses in through-silicon vias for three-dimensional interconnects by bending beam technique Appl.(More)
Mobility and Dit distributions for p-channel MOSFETs with HfO2/LaGeOx passivating layers on germanium " Stubborn " triaminotrinitrobenzene: Unusually high chemical stability of a molecular solid to 150 GPa Stress migration risk on electromigration reliability in advanced narrow line copper interconnects Stress migration model for Cu interconnect reliability(More)
—This paper investigates two key aspects of thermomechanical reliability of through-silicon vias (TSV) in 3D interconnects. One is the piezoresistivity effect induced by the near surface stresses on the charge mobility for p-and n-channel MOSFET devices. The other problem concerns the interfacial delamination induced by thermal stresses including the pop-up(More)
Three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective approach to overcome the wiring limit beyond the 32 nm technology node. Due to the mismatch of thermal expansion between the via material and Si, thermal stresses ubiquitously exist in the integrated 3-D structures. The thermal stresses can be significant to(More)
—An analytical approach to predict initiation and growth of interfacial delamination in the through-silicon via structure is developed by combining a cohesive zone model with a shear-lag model. Two critical temperatures are predicted for damage initiation and fracture initiation, respectively. It is found that via extrusion significantly increases beyond(More)
The analgesic mechanism of opioids is known to decrease the excitability of substantia gelatinosa (SG) neurons receiving the synaptic inputs from primary nociceptive afferent fiber by increasing inwardly rectifying K(+) current. In this study, we examined whether a µ-opioid agonist, [D-Ala2,N-Me-Phe4, Gly5-ol]-enkephalin (DAMGO), affects the two-pore domain(More)