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The occupancy of caches has tended to be dominated by the logic bit value '0' approximately 75% of the time. Periodic bit flipping can reduce this to 50%. Combining cache power saving strategies with bit flipping can lower the effective logic bit value '0' occupancy ratios even further. We investigate how Negative Bias Temperature Instability (NBTI) affects(More)
In this paper, we present a novel six-transistor (6T) single-ended static random access memory (SE-SRAM) cell for ultra-low-voltage applications. The proposed design has a strong 2.65X worst case read static noise margin (SNM) compared to a standard 6T SRAM. A strong write-ability of logic 'one' is achieved, which is problematic in an SE-SRAM cell with a(More)
— Lowering supply voltage is an effective technique for power reduction in memory design, however traditional memory cell design fails to operate, as shown in [3], [10], at ultra-low voltages. Therefore, to operate cells in the subthreshold regime, new cell structures needs to be explored. Towards this, we present a single-ended I/O (SEIO) bit-line latch(More)
— In a nanoscale technology, memory bits are highly susceptible to process variation induced read/write failures. To address the above problem, in this paper a new memory cell is proposed which is highly stable against nanoscale process variations as well as power efficient. The effectiveness of the proposed cell is exhaustively evaluated through detailed(More)
Low power, minimum transistor count and fast access static random access memory (SRAM) is essential for embedded multimedia and communication applications realized using system on a chip (SoC) technology. Hence, simultaneous or parallel read/write (R/W) access multi-port SRAM bitcells are widely employed in such embedded systems. In this paper, we present a(More)
This paper presents a six-transistor (6T) single-ended static random access memory (SE-SRAM) bitcell with an isolated read-port, suitable for low-<i>V</i><sub><i>dd</i></sub> and low-power embedded applications. The proposed bitcell has a better static noise margin (SNM) and write-ability compared to a standard 6T bitcell and equivalent to an 8T bitcell(More)