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The occupancy of caches has tended to be dominated by the logic bit value '0' approximately 75% of the time. Periodic bit flipping can reduce this to 50%. Combining cache power saving strategies with bit flipping can lower the effective logic bit value '0' occupancy ratios even further. We investigate how Negative Bias Temperature Instability (NBTI) affects(More)
— Lowering supply voltage is an effective technique for power reduction in memory design, however traditional memory cell design fails to operate, as shown in [3], [10], at ultra-low voltages. Therefore, to operate cells in the subthreshold regime, new cell structures needs to be explored. Towards this, we present a single-ended I/O (SEIO) bit-line latch(More)
This paper proposes a low cost solution to detect and correct a transient faults in registers of a design. The proposed method realizes a single-event upset detection and correction (SEU-DC) technique. The detection and correction of SEU in registers of a design is difficult and requires some efficient approaches without significant area overhead and timing(More)
Steep sub-threshold transistors are promising candidates to replace the traditional MOSFETs for sub-threshold leakage reduction. In this paper, we explore the use of Inter-Band Tunnel Field Effect Transistors (TFETs) in SRAMs at ultra low supply voltages. The uni-directional current conducting TFETs limit the viability of 6T SRAM cells. To overcome this(More)
This paper presents a six-transistor (6T) single-ended static random access memory (SE-SRAM) bitcell with an isolated read-port, suitable for low-<i>V</i><sub><i>dd</i></sub> and low-power embedded applications. The proposed bitcell has a better static noise margin (SNM) and write-ability compared to a standard 6T bitcell and equivalent to an 8T bitcell(More)
In this paper, we present a novel six-transistor (6T) single-ended static random access memory (SE-SRAM) cell for ultra-low-voltage applications. The proposed design has a strong 2.65X worst case read static noise margin (SNM) compared to a standard 6T SRAM. A strong write-ability of logic 'one' is achieved, which is problematic in an SE-SRAM cell with a(More)
Low power, minimum transistor count and fast access static random access memory (SRAM) is essential for embedded multimedia and communication applications realized using system on a chip (SoC) technology. Hence, simultaneous or parallel read/write (R/W) access multi-port SRAM bitcells are widely employed in such embedded systems. In this paper, we present a(More)
— In a nanoscale technology, memory bits are highly susceptible to process variation induced read/write failures. To address the above problem, in this paper a new memory cell is proposed which is highly stable against nanoscale process variations as well as power efficient. The effectiveness of the proposed cell is exhaustively evaluated through detailed(More)
— Single-ended static random access memory (SE-SRAM) is well known for their tremendous potential of low active power and leakage dissipations. In this paper, we present a novel six-transistor (6T) SE-SRAM bitcell for low-V dd and high-speed embedded applications with significant improvement in their power, performance and stability under process(More)