Jawad Qureshi

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We show the status of laterally diffused metal-oxide-semiconductor (LDMOS) technology, which has been the device of choice for RF power applications for more than one decade. LDMOS fulfills the requirements for a wide range of class AB and pulsed applications, such as base station, broadcast, and microwave. We present state-of-the-art RF performance of the(More)
New generations wireless communication systems require linear efficient RF power amplifiers for higher data transmission rates. However, conventional RF power amplifiers are normally designed for peak efficiency under maximum output power condition. Consequently, when the power is backed-off from its maximum point, the amplifier efficiency drops sharply. As(More)
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