Javier Martín-Martínez

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With further scaling of nanometer CMOS technologies, yield and reliability become an increasing challenge. This paper reviews the most important phenomena affecting yield and reliability. For each effect, the basic physical mechanisms causing the effect and its impact on transistor parameters are described. Possible solutions to cope/handle with these(More)
The ubiquity of threshold voltage relaxation is demonstrated in samples with both conventional and high-k dielectrics following various stress conditions. A technique based on recording short traces of relaxation during each measurement phase of a standard measure-stress-measure sequence allows monitoring and correcting for the otherwise-unknown relaxation(More)
Broad similarity between negative bias temperature instability (NBTI) relaxation and 1/f noise is observed. Individual transitions in NBTI relaxation in small pFETs are observed and Poisson defect number statistics is inferred. Finally, it is argued that the wide distribution of defect times should be considered in addition to defect number variation in(More)
Bias Temperature Instability (BTI) is one of the key causes of reliability degradations of nano-CMOS circuits. While the long-term impact of BTI has been studied since years, the <i>short-term</i> implications of BTI on circuits are unexplored. In fact, in physics short-term BTI effects, i.e. instantaneous (i.e. sub <i>&mu;s</i>) frequency dependent(More)
RELAB is a new simulation tool for circuit reliability evaluation, based on the physical models of different degradation phenomena. In this work, the RELAB capabilities to include Bias Temperature Instability (BTI) and its variability in SPICE simulators is presented.