Javier A. Salcedo

Learn More
Gate oxide breakdown is analyzed under very fast transmission line pulsed (VFTLP) stress, using different pulse-rise times and-widths. The switching of oxide behavior pre-and post-breakdown occurs in tenths of a nanosecond and it shows reproducible voltage and current characteristics. The total stress and time-dependent-dielectric-breakdown (TDDB) during(More)
A new technique is offered as an alternative to extract the threshold voltage of MOSFETs. It defines the threshold at the transition from subthreshold-to-strong inversion operation. Besides its stronger physical foundation, the method provides greater noise and measurement error immunity than conventional methods because, instead of the differentiation(More)
  • 1