Jatindra K. Rath

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High quality non porous silicon nitride layers were deposited by hot wire chemical vapour deposition at substrate temperatures lower than 110 degrees C. The layer properties were investigated using FTIR, reflection/transmission measurements and 1:6 buffered HF etching rate. A Si-H peak position of 2180 cm(-1) in the Fourier transform infrared absorption(More)
Microcrystalline silicon germanium films showing excellent opto-electronic properties have been prepared at a substrate temperature of 1951C by radio frequency plasma enhanced chemical vapor deposition at 13.56 MHz. A white light (AM 1.5) photoconductivity of 5 Â 10 À5 /O cm and ambipolar diffusion length of 114 nm (from SSPG) established the device(More)
In solar cell technology, the current trend is to thin down the active absorber layer. The main advantage of a thinner absorber is primarily the reduced consumption of material and energy during production. For thin film silicon (Si) technology, thinning down the absorber layer is of particular interest since both the device throughput of vacuum deposition(More)
A retarding field energy analyzer (RFEA) with grids created by laser-cutting a honeycomb mesh in a 50 μm thick molybdenum foil is presented. The flat grids span an area of 1 cm2 and have high transmission (20 μm wide walls between 150 μm wide meshes). The molybdenum grids were tested in a 3-grid RFEA configuration with an analyzer depth of 0.87 mm.
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