Janne Puustinen

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We report an optically-pumped semiconductor disk laser passively mode-locked with a semiconductor saturable-absorber mirror. Both the absorber and the gain media were made of dilute nitride compound semiconductor, GaInNAs, which enables operation around 1.2 microm wavelengths. The laser generated 5 ps optical pulses with an average output power up to 275(More)
Composting of contaminated soil in biopiles is an ex situ technology, where organic matter such as bark chips are added to contaminated soil as a bulking agent. Composting of lubricating oil-contaminated soil was performed in field scale ( [Formula: see text] m(3)) using bark chips as the bulking agent, and two commercially available mixed microbial inocula(More)
We report the formation and phase transformation of Bi-containing clusters in GaAs(1-x)Bi(x) epilayers upon annealing. The GaAs(1-x)Bi(x) layers were grown by molecular beam epitaxy under low (220 °C) and high (315 °C) temperatures and subsequently annealed using different temperatures and annealing times. Bi-containing clusters were identified only in the(More)
We report a comparative study of carrier dynamics in semiconductor saturable absorber mirrors (SESAMs) containing InGaAs quantum wells and InGaAsN quantum wells (QWs). The static and dynamic reflectivity spectra were measured with a Fourier-transform-infraredspectrometer and a pump-probe setup, respectively. The influence of rapid thermal annealing (RTA) on(More)
We demonstrate a 1.32 μm mode-locked bismuth fiber laser operating in both anomalous and normal dispersion regimes. In anomalous dispersion regime, achieved by using 13 nm/cm linearly chirped fiber Bragg grating, the laser exhibits multiple soliton operation with pulse duration of 2.51 ps. With the net normal cavity dispersion, the single-pulse operation(More)
In this study, we investigate the effect of annealing and nitrogen amount on electronic transport properties in n- and p-type-doped Ga0.68In0.32NyAs1 - y/GaAs quantum well (QW) structures with y = 0%, 0.9%, 1.2%, 1.7%. The samples are thermal annealed at 700°C for 60 and 600 s, and Hall effect measurements have been performed between 10 and 300 K. Drastic(More)
In this work the photoconductivity of a p-i-n Ga<inf>0.952</inf>In<inf>0.048</inf>N<inf>0.016</inf>As<inf>0.984</inf>/GaAs multiple quantum well (MQW) structure is investigated as a function of temperature. At low temperatures step-like increases are observed in the devices I&#x2013;V characteristic when illuminated with a 950nm wavelength light. The number(More)
We demonstrate for the first time the operation of GaInNAs and GaAs n-i-p-i doping solar cells with ion-implanted selective contacts. Multiple layers of alternate doping are grown by molecular beam epitaxy to form the n-i-p-i structure. After growth, vertical selective contacts are fabricated by Mg and Si ion implantation, followed by rapid thermal(More)
We describe the fabrication of roll-to-roll (R2R) printed organic photovoltaic (OPV) modules using gravure printing and rotary screen-printing processes. These two-dimensional printing techniques are differentiating factors from coated OPVs enabling the direct patterning of arbitrarily shaped and sized features into visual shapes and, increasing the freedom(More)
In this work, we report on the spontaneous formation of ordered arrays of nanometer-sized Bi-rich structures due to lateral composition modulations in Ga(As,Bi)/GaAs quantum wells grown by molecular beam epitaxy. The overall microstructure and chemical distribution is investigated using transmission electron microscopy. The information is complemented by(More)