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— Solar cells based on a heterojunction between crystalline silicon and the organic polymer PEDOT:PSS were fabricated at temperatures < 100ºC by spin-coating. The Si/PEDOT interface blocks electrons in n-type silicon from moving to an anode and functions as a low-temperature alternative to diffused p-n junctions. Reverse recovery measurements were used to… (More)
The classical SiO2/Si interface, which is the basis of integrated circuit technology, is prepared by thermal oxidation followed by high temperature (>800 °C) annealing. Here we show that an interface synthesized between titanium dioxide (TiO2) and hydrogen-terminated silicon (H:Si) is a highly efficient solar cell heterojunction that can be prepared under… (More)
—Solar cells based on a heterojunction between crystalline silicon and the organic polymer PEDOT:PSS were fabricated at temperatures <100 • C by spin coating. The Si/PEDOT interface blocks electrons in n-type silicon from moving to the an-ode and functions as a low-temperature alternative to diffused p-n junctions. The device takes advantage of the light… (More)
Articles you may be interested in High efficiency sequentially vapor grown n-i-p CH3NH3PbI3 perovskite solar cells with undoped P3HT as p-type heterojunction layer Carrier recombination losses in inverted polymer: Fullerene solar cells with ZnO hole-blocking layer from transient photovoltage and impedance spectroscopy techniques High efficiency double… (More)
We describe the use of organic and metal oxide semiconductors to form wide-bandgap heterojunctions to crystalline silicon. We use these semiconductors to demonstrate a heterojunction which both blocks electrons and passes holes, and a complementary heterojunction which blocks holes and passes electrons and blocks holes. The carrier transport functions are… (More)
Given the large surface-to-volume ratio of nanoscale and nanostructured materials and devices, their performance is often dominated by processes occurring at free surfaces or interfaces. By connecting a material's atomic structure and thermo-mechanical response, molecular dynamics is helping researchers better understand and quantify these processes.
— We demonstrate a hole-blocking crystalline-silicon/titanium-oxide heterojunction that can be fabricated by a modified MOCVD process at only 100 ºC substrate temperature. interface was characterized in terms of interface recombination velocity. We show that annealed Si/TiO 2 interfaces can achieve recombination velocities of ~ 200 cm/s.