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We report on a characteristic photoluminescence feature of the substitutional Mn in high quality GaMnN layers. The lattice site was identified using atom localization by channeling enhanced… (More)
We present investigations of Gd-implanted aluminum nitride, studied with cathodoluminescence (CL) as well as time-resolved CL in the temperature range 12–300 K. Luminescence due to intra-4f electron… (More)
Quantitative lattice-site determination of manganese in spatially inhomogeneous low-temperature GaN is performed by channeling enhanced microanalysis. The technique allows one to measure the… (More)
GaMnN is a prototypical GaN-based dilute magnetic semiconductor (DMS) and its potential as a room temperature ferromagnetic material is still a controversial question to be answered. Diluted GaMnN… (More)
We report on the optical characterization of highly Si-doped AlN layers grown by plasma-assisted molecular-beam epitaxy. Cathodoluminescence spectra reveal a sharp band-edge line and two broadbands… (More)