Jan Ingo Flege

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Epitaxial multiferroic BaTiO 3-BiFeO 3 composite thin films exhibit a correlation between the magnetoelectric (ME) voltage coefficient α ME and the oxygen partial pressure during growth. The ME coefficient α ME reaches high values up to 43 V/(cm¨Oe) at 300 K and at 0.25 mbar oxygen growth pressure. The temperature dependence of α ME of the composite films(More)
  • Y H Lin, C K Cheng, K H Chen, C H Fu, T W Chang, C H Hsu +3 others
  • 2015
Single-crystal atomic-layer-deposited (ALD) Y 2 O 3 films 2 nm thick were epitaxially grown on molecular beam epitaxy (MBE) GaAs(001)-4 ˆ 6 and GaAs(111)A-2 ˆ 2 reconstructed surfaces. The in-plane epitaxy between the ALD-oxide films and GaAs was observed using in-situ reflection high-energy electron diffraction in our uniquely designed MBE/ALD(More)
Oxidation of silver films of one-and two-monolayer thicknesses on the Ni(111) surface was investigated by low-energy electron microscopy at temperatures of 500 and 600 K. Additionally, intensity–voltage curves were measured in situ during oxidation to reveal the local film structure on a nanometer scale. At both temperatures, we find that exposure to(More)
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