Jan-Hinnerk Wolter

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The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, crosslike shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model and from a tight-binding model. This demonstrates that anisotropy arising(More)
The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wave function in GaAs persists even at very short Mn-Mn spatial(More)
We demonstrate that the soft nature of organic semiconductors can be exploited to directly measure the potential distribution inside such an organic layer by scanning-tunneling microscope (STM) based spectroscopy. Keeping the STM feedback system active while reducing the tip-sample bias forces the tip to penetrate the organic layer. From an analysis of the(More)
We present first results of the analysis of molecular beam epitaxy-grown Be:GaAs delta-doped layers with atomic resolution. These were obtained using cross-sectional scanning tunneling microscopy. At low Be areal density, the width of the delta layers is 1 nm, whereas at higher Be areal densities the spread of the layers is appreciable and the widths are(More)
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the(More)
• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the(More)
N. Žurauskienėa,∗, S. Marcinkevičius, G. Janssen, E. Goovaerts, R. Nötzel, P.M. Koenraad and J.H. Wolter Semiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania Department of Microelectronics and Information Technology Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden Department of Physics, University of Antwerp Campus Drie Eiken(More)