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Recent progress in EDA tools allows IC designs to be accurately verified with consequent improvements in yield and performance through reduced guard bands. This paper will present a tools perspective, including the primary effects such as HCI, NBTI and EM for which EDA tools are available, types of tools (dynamic simulation vs. static rule checking) and(More)
This paper gives a brief overview on recent advances in bipolar junction transistor (BJT) modeling and related simulation applications in circuit design. This work starts with a review of existing BJT compact model formulations, and covers a broad range of advanced topics such as precision temperature modeling, sub-circuit design, mismatch and corner(More)
A new compact LDMOS is introduced in this paper for circuit simulation. Features covered in this model relevant for a LDMOS device include: unique bias dependent drift region resistance model accounting for velocity saturation, bias dependent overlap region resistance model, dual Isub model to model Iii current in different region in the device and(More)
This paper gives an overview of statistical modeling and circuit simulation including PVT, Monte Carlo and high Sigma for advanced CMOS process variation. The methodologies of generating corner and statistical models considering all related process effects, especially variation correlation, are discussed. The significance and usefulness of the statistical(More)
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