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Journals and Conferences
Despite the recent progress in the development of III-Nitride semiconductor based ultraviolet light emitting diodes (UVLEDs), commercially available devices emitting at wavelengths shorter than 370… (More)
The development of pseudomorphic layers on low dislocation density AlN substrates is leading to improvements in reliability and performance of devices operating in the UVC range.
The use of low defect density bulk AlN substrates has led to reliable pseudomorphic ultraviolet light emitting diodes capable of mW level power outputs from packaged devices emitting from 250-275 nm.
Photoluminescence lifetimes of nearly dislocation free high Al content AlGaN MQW LEDs on bulk AlN are presented as a function of temperature and excitation power for both direct photo-excitation of… (More)
Time-resolved photoluminescence and transmission electron microscopy results suggest that the density of point defects may have a more significant role than threading dislocations in the performance… (More)
UVC light output of 66 mW at 300 mA CW has been achieved from LEDs on AlN substrates with extensive photon extraction. Proper vessel design allows for efficient irradiation of a water sample for… (More)
Bulk AlN substrates are an ideal solution for the growth of ultraviolet-C light emitting diodes (UVCLED). They are optically transparent at this wavelength and closely lattice and thermally expansion… (More)