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A wide variety of commercial ellipsometers are available in the market today. They all measure the change in the state of polarization of light on reflection, but the measurement techniques adopted… (More)
The optical properties of a set of high-k dielectric HfO2 films annealed at various high temperatures were determined by spectroscopic ellipsometry. The results show that the characteristics of the… (More)
The interface of zirconium oxide thin films on silicon is analyzed in detail for their potential applications in the microelectronics. The formation of an interfacial layer of ZrSixOy with graded Zr… (More)
Nitridation of HfSiO films improves certain physical and electrical properties—when using gate stack layers—such as their crystallization temperature and their resistance to interdiffusion. We have… (More)
Abstract We report efforts to develop optical dispersion models for new high k materials and silicon oxynitrides. We find the Tauc–Lorentz model provides superior fits to Ta 2 O 5 and ZrO 2… (More)
The interpretation and the precision of spreading resistance measurements have been seen to be strongly dependent on specimen surface preparation. A bakeout at 150°C for 15 min. following specimen… (More)