James R. Lloyd

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The magnitude of the negative magnetoresistance (MR) effect found in the low-k dielectric SiCOH is found to decrease with time on electrical bias and temperature stress (BTS). The MR decay fits an exponential function reasonably well such that the time constant of the fit can be used to compare decays due to different BTS conditions. Higher voltages and(More)
A principle effort during the development of any new semiconductor process is that of insuring the inherent reliability of material made with that process. However, despite its importance it continues to be a largely un-standardized process with great variations across the industry. Designing a qualification process comes with the challenge of optimizing(More)
A comprehensive study of reliability failure modes in an advanced through-silicon via (TSV) mid process flow is presented in Part I of this paper. This is the first time unique TSV mid reliability failure modes at leading-edge TSV dimensions have been observed and reported. TSV Kelvin, comb and chain test structures with 10:1 aspect ratio and a TSV diameter(More)
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