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A series of experiments were initiated after finding that a supersteep retrograde channel of an n-channel silicon-based field effect transistor would not have an acceptable threshold voltage if… (More)
Quantum chemical calculations were employed to get insight into the mechanisms involved in plasma-induced nitridation of gate oxide that will suppress boron penetration. The roles played by the… (More)
Subamorphizing silicon preimplants were combined with relatively high dose drain (1014atoms/cm2) arsenic, boron, and phosphorus implants. The studies included as-implanted distributions. Extensive… (More)
Bounds on Codes from Smooth Toric Threefolds with Rank(Pic(X)) = 2. (August 2008) James Lee Kimball, B.S., Louisiana College; M.S., Texas A&M University Chair of Advisory Committee: Dr. Henry Schenck… (More)