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  • Aditya Bansal, Rahul M. Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang
  • Computer Science, Engineering
  • Microelectron. Reliab.
  • 2009 (First Publication: 1 June 2009)
  • Negative and Positive Bias Temperature Instabilities (NBTI (in PFET) and PBTI (in NFET)) weaken MOSFETs with time. The impact of such device degradation can be severe in Static Random Access MemoriesExpand
  • Aditya Bansal, R. Uma Maheshwara Rao, Jae-Joon Kim, Sufi Zafar, James H. Stathis, Ching-Te Chuang
  • Engineering
  • IEEE International Reliability Physics Symposium
  • 2009 (First Publication: 1 April 2009)
  • The stability and performance characteristics of Static Random Access Memories (SRAMs) are known to degrade with time due to the impact of Negative and Positive Bias Temperature Instabilities (NBTIExpand