James G. Champlain

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SUMMARY Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These(More)
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al 2 O 3 interfaces. Prior to atomic layer deposition of an Al 2 O 3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical(More)
Heterostructures consisting of an InGaSb quantum well situated between AlGaSb barriers were grown by molecular beam epitaxy. Calculations indicate a type-I band structure with substantial valence and conduction band offsets that can allow for the confinement of either electrons or holes in the InGaSb. Quantum wells with n-type conduction were achieved using(More)
Solid source molecular beam epitaxy has been used to grow random alloy quaternary InAlAsSb and ternary InGaSb alloys with a 6.2 Å lattice constant for use in electronic devices such as p-n junctions and heterojunction bipolar transistors ͑HBTs͒. Several p-n hetrojunctions composed of p-type InGaSb and one of several different n-type InAlAsSb alloys have(More)
Sb-based pN heterojunction diodes at 6.2 Å, consisting of narrow bandgap p-type In0.27Ga0.73Sb and wide bandgap n-type In0.69Al0.41As0.41Sb0.59, have been fabricated and measured. These diodes show excellent electrical characteristics with an ideality factor of 1.2 and high current density. S-parameter measurements and subsequent analysis show that these(More)
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