James G. Champlain

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SUMMARY Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These(More)
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al 2 O 3 interfaces. Prior to atomic layer deposition of an Al 2 O 3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical(More)
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