James Egley

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In this paper, we analyze the mechanical stress induced from source/drain embedded SiGe (eSiGe) in multiple generations of FinFET technologies. By leveraging TCAD simulations, we show that high stress over the entire fin height could be achieved with a proper design of the eSiGe cavity. We also find that the stress should not undergo any reduction as the(More)
Remote charge scattering (RCS) has become a serious obstacle inhabiting the performance of ultrathin gate oxide MOSFETs. In this paper, we evaluate the impact of RCS by treating the real-space full Coulomb interaction between remote charges and inversion carriers. A new approach that can be simply incorporated in ensemble Monte Carlo (EMC) based simulations(More)
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