James Egley

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XiaoYan Liu1
KangLiang Wei1
1XiaoYan Liu
1KangLiang Wei
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Remote charge scattering (RCS) has become a serious obstacle inhabiting the performance of ultrathin gate oxide MOSFETs. In this paper, we evaluate the impact of RCS by treating the real-space full Coulomb interaction between remote charges and inversion carriers. A new approach that can be simply incorporated in ensemble Monte Carlo (EMC) based simulations(More)
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