James Benson

Igor Kovalenko1
T Fuller1
Alexandre Magasinski1
K Evanoff1
1Igor Kovalenko
1T Fuller
1Alexandre Magasinski
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—In this paper, we present a compact model for silicon on -insulator (SOI) laterally double diffused (LD) MOSFETs. The model is complete insofar as it uses no subcircuits, and is intended to predict device operation in all regions of bias. The device current is described by two main equations handling the MOS channel and the drift region, both of which are(More)
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