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An Open-Switch Fault Diagnosis Method for Single-Phase PWM Rectifier Using a Model-Based Approach in High-Speed Railway Electrical Traction Drive System
The converter with a single-phase rectifier, a dc-link circuit and a three-phase inverter is widely applied in high-speed railway electrical traction drive system. The fault frequency of single-phaseExpand
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Deep submicrometer double-gate fully-depleted SOI PMOS devices: a concise short-channel effect threshold voltage model using a quasi-2D approach
This paper reports a concise short-channel effect threshold voltage model using a quasi-2D approach for deep submicrometer double-gate fully-depleted SOI PMOS devices. By considering the hole densityExpand
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A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs
The complete general solution of nonlinear 1-D undoped Poisson’s equation, in both Cartesian and cylindrical coordinates, is derived by employing a special variable transformation method. A generalExpand
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A closed‐form inversion‐type polysilicon thin‐film transistor dc/ac model considering the kink effect
This paper reports a closed‐form inversion‐type polysilicon thin‐film transistor dc/ac model considering kink effect for circuit simulation. Using a quasi‐two‐dimensional approach and an impactExpand
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An analytical a-Si:H TFT DC/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states
This paper presents an analytical a-Si:H DC/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states.Expand
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A non-local impact ionization/lattice temperature model for VLSI double-gate ultrathin SOI NMOS devices
This paper presents an analytical drain current model for VLSI double-gate ultrathin SOI NMOS devices considering both the nonlocal impact ionization effect and the lattice temperature effect.Expand
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A closed-form analytical forward transit time model considering specific models for bandgap-narrowing effects and concentration-dependent diffusion coefficients for BJT devices operating at 77 K
The authors report a closed-form analytical low-temperature forward transit time model considering bandgap-narrowing effects and concentration-dependent diffusion coefficients based on the entireExpand
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Analytical Threshold Voltage Formula Including Narrow-Channel Effects for VLSI Mesa-Isolated Fully Depleted Ultrathin Silicon-On-Insulator N-Channel Metal-Oxide-Silicon Devices
We report an analytical threshold voltage formula taking into consideration narrow-channel effects for mesa-isolated fully depleted ultrathin silicon-on-insulator (SOI) n-channel metal-oxide-siliconExpand
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Simple analytical model for short-channel MOS devices
A simple analytical model derived from a quasi-two-dimensional analysis with a nonvanishing E-field derivative at the pinchoff point and a continuous output conductance at the transition point forExpand
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A compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport
This paper reports a compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport based on a qualitative analysis. As verified by two-dimensional (2-D) simulationExpand
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