Jaehack Jeong

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The dielectric stacking effects of Al<sub>2</sub>O<sub>3</sub> and HfO<sub>2</sub> thin layers in metal-insulator-metal capacitors are investigated for their leakage current, breakdown voltage, and voltage linearity of the dielectrics. The stacked dielectrics over three layers show the enhancement of dielectric permittivity and voltage linearity of(More)
Pt/HfO2 , HfO2 – Al2O3 , or Al2O3 – HfO2 – Al2O3 /p-type Si ~100! metal oxide semiconductor capacitors, which were fabricated using an atomic-layer-deposition technique, were post-deposition annealed under a NH3 atmosphere in order to investigate the nitrogen incorporation behavior along with their influences on the electrical properties. X-ray(More)
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