Jaegab Lee

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We fabricated nanotubules of TiO2 and ZrO2 using atomic layer deposition (ALD) technique with polycarbonate (PC) nanoporous filters as a template. Alkylsiloxane monolayers on the both sides of PCs were formed by blanket type contact printing in order to achieve one-step process of the freestanding oxide nanotubes. TiO2 and ZrO2 nanotubes with 30 ~ 200 nm of(More)
UNLABELLED A MoO3/Au/MoO3 (MAM) tri-layer structure was developed as a transparent, low-resistance anode for use in organic solar cells. Transmittance was maximized at 82% using symmetric bottom and top MoO3 layers (each of thickness 30 nm) either side of a 12 nm Au layer. Low sheet resistance also resulted (7.4 ohm per square). The series resistance and(More)
Interest in transparent oxide thin film transistors utilizing ZnO material has been on the rise for many years. Recently, however, IGZO has begun to draw more attention due to its higher stability and superior electric field mobility when compared to ZnO. In this work, we address an improved method for patterning an a-IGZO film using the SAM process, which(More)
Epitaxial anatase thin films were grown on single-crystal LaAlO3 substrates by a sol-gel process. The epitaxial relationship between TiO2 and LaAlO3 was found to be [100]TiO2||[100]LaAlO3 and (001)TiO2||(001)LaAlO3 based on X-ray diffraction and a high-resolution transmission electron microscopy. The epitaxial anatase films show significantly improved(More)
We describe a versatile approach for preparing flash memory devices composed of polyelectrolyte/gold nanoparticle multilayer films. Anionic gold nanoparticles were used as the charge storage elements, and poly(allylamine)/poly(styrenesulfonate) multilayers deposited onto hafnium oxide (HfO2)-coated silicon substrates formed the insulating layers. The top(More)
In this study, non-volatile memory effect was characterized using the single-transistor-based memory devices based on self-assembled gold nanoparticles (AuNP) as the charge trapping elements and atomic-layer deposited ZnO as the channel layer. The fabricated memory devices showed controllable and reliable threshold voltage shifts according to the(More)
We have investigated a novel method for patterning of (3, 4-ethylenedioxythiophene) PEDOT, which has involved a selective polymerization of PEDOT on an UV-activated Self-Assembled-Monolayer surface. OTS coated surface has been activated by UV exposure, and the UV-exposed area served as adsorption sites for FeCl3 oxidants, providing a selective deposition of(More)
In this paper, we report a novel patterning method for a poly(3,4-ethylenedioxythiophene) (PEDOT) nanofilm deposited on an OTS monolayer-coated silicon wafer substrate by the vapor phase polymerization method. To scrutinize the adhesion improvement, electrical conductivity and feature controllability, patterned PEDOT nanofilms were investigated with a(More)
This study reports a novel patterning method for highly pure poly(3,4-ethylenedioxythiophene) (PEDOT) nanofilms having a particularly strong adhesion to a SiO2 surface. An oxidized silicon wafer substrate was micro-contact printed with n-octadecyltrichlorosilane (OTS) monolayer, and subsequently its negative pattern was self-assembled with three different(More)
Highly pure 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) nanofilms were deposited on a hydrophobic OTS-SAM surface at two different substrate temperatures (70 degrees C and 90 degrees C) via the vacuum thermal evaporation (VTE) method. X-ray reflectivity measurements over a wide temperature range (30 degrees C-284 degrees C) revealed that(More)