Jae Hwa Seo

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We have proposed a tunneling field-effect transistor (TFET) having a GaAs/InGaAs heterojunction structure for radio frequency (RF) application. The GaAs/InGaAs heterojunction TFETs are investigated(More)
Superior device characteristics have been demonstrated with a novel Al(In)N/GaN-based steep fin-type high electron mobility transistor (HEMT) with a fin width (W<sub>fin</sub>) of 120 nm, a fin(More)