Jae-Gil Lee

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In this study, we fabricated AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for high voltage switching applications where both the field plate length and the gate-to-drain distance were varied for structural optimization. A tapered gate was fabricated in conjunction with the field plate in order to effectively suppress the high electric field at(More)
We have developed a high-quality SiO2 deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of ∼12 MV/cm was achieved using the optimized deposition(More)
We have fabricated field-plated AlGaN/GaN Heterostructure Field Effect Transistors(HFETs) on Si substrate for high voltage operation and submitted the devices to the DC stress tests to investigate the degradation phenomena. The devices were stressed under two different types of bias configuration including on-state with high current and off-state with low(More)
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