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—We have developed a high-quality SiO 2 deposition process using an inductively coupled plasma chemical vapor de-position system for use as a gate oxide of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of ∼12 MV/cm was achieved using the optimized deposition(More)
We have fabricated field-plated AlGaN/GaN Heterostructure Field Effect Transistors(HFETs) on Si substrate for high voltage operation and submitted the devices to the DC stress tests to investigate the degradation phenomena. The devices were stressed under two different types of bias configuration including on-state with high current and off-state with low(More)
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