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DRAM standby current failure: the influence of hot carrier degradation on voltage level-up shifter circuit
In this report, the phenomenon of standby state current failure of dynamic random access memory (DRAM), which incorporates a low voltage to high voltage CMOS level-up shifter, was investigated. As aExpand
Investigation of Hot carrier Degradation in Grooved Channel Structure nMOSFETs: Sphere shaped Recess Cell Array Transistor (SRCAT)
  • J.Y. Seo, K.J. Lee, +6 authors C. Yoon
  • Materials Science
  • IEEE International Reliability Physics Symposium…
  • 26 March 2006
In this paper, first, it has been discussed hot carrier reliability in both Pch, RCAT and SRCAT. Second, we showed the origin of electric field suppression where the supply-voltage is applied at theExpand