J.F. Kluender

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Broad-area (W=150 /spl mu/m) single-quantum-well (SQW) lasers have been successfully fabricated on n-type In/sub 0.03/Ga/sub 0.97/As substrates without incorporating aluminum-containing alloys. The(More)
In this talk, we present the design and device results of strained-layer InGaAs-GaAs-InGaP separate confinement heterostructure lasers emitting at 1.14 /spl mu/m fabricated on a ternary In/sub(More)
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