J.-Y Jason Lin

Learn More
This paper aimed to achieve both higher activation level and less diffusion by passivating the vacancies with fluorine (F) implant. The effect of F on P-doped Ge was also demonstrated. In addition,(More)
In this letter, we have analyzed the area, perimeter, and corner leakage current components of lateral p<sup>+</sup>/n-Ge-based diodes with a GeO<sub>2</sub> isolation layer, which were fabricated at(More)
  • 1