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- Publications
- Influence
Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology
- W. Bogaerts, R. Baets, +7 authors D. van Thourhout
- Materials Science
- Journal of Lightwave Technology
- 10 January 2005
High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator using… Expand
Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography
- P. Dumon, W. Bogaerts, +8 authors R. Baets
- Materials Science
- IEEE Photonics Technology Letters
- 4 May 2004
We demonstrate single-mode photonic wires in silicon-on-insulator with propagation loss as low as 2.4 dB/cm, fabricated with deep ultraviolet lithography and dry etching. We have also made compact… Expand
Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks.
- J. Van Campenhout, W. Green, S. Assefa, Y. Vlasov
- Materials Science, Medicine
- Optics express
- 21 December 2009
We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17 dB are obtained for both the 'on' and 'off'… Expand
Basic structures for photonic integrated circuits in Silicon-on-insulator.
- W. Bogaerts, D. Taillaert, +7 authors S. Beckx
- Materials Science, Medicine
- Optics express
- 19 April 2004
For the compact integration of photonic circuits, wavelength-scale structures with a high index contrast are a key requirement. We developed a fabrication process for these nanophotonic structures in… Expand
Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.
- Hui Yu, M. Pantouvaki, +11 authors W. Bogaerts
- Materials Science, Medicine
- Optics express
- 4 June 2012
Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperform… Expand
56 Gb/s Germanium Waveguide Electro-Absorption Modulator
- S. Srinivasan, M. Pantouvaki, +8 authors J. Van Campenhout
- Materials Science
- Journal of Lightwave Technology
- 15 January 2016
We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in a fully integrated Si photonics platform on 200 mm… Expand
Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit.
- J. Van Campenhout, P. Rojo Romeo, +7 authors R. Baets
- Materials Science, Medicine
- Optics express
- 28 May 2007
A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electrically… Expand
An octave-spanning mid-infrared frequency comb generated in a silicon nanophotonic wire waveguide
- B. Kuyken, T. Ideguchi, +9 authors N. Picqu'e
- Materials Science, Physics
- Nature communications
- 16 May 2014
Laser frequency combs, sources with a spectrum consisting of hundred thousands evenly spaced narrow lines, have an exhilarating potential for new approaches to molecular spectroscopy and sensing in… Expand
-1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond.
- H. Chen, P. Verheyen, +8 authors J. Van Campenhout
- Materials Science, Medicine
- Optics express
- 7 March 2016
We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at… Expand
Imec iSiPP25G silicon photonics: a robust CMOS-based photonics technology platform
- P. Absil, P. De Heyn, +8 authors J. Van Campenhout
- Computer Science, Engineering
- Photonics West - Optoelectronic Materials and…
- 27 February 2015
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