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Nanophotonic waveguides in silicon-on-insulator fabricated with CMOS technology
High-index-contrast, wavelength-scale structures are key to ultracompact integration of photonic integrated circuits. The fabrication of these nanophotonic structures in silicon-on-insulator usingExpand
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Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography
We demonstrate single-mode photonic wires in silicon-on-insulator with propagation loss as low as 2.4 dB/cm, fabricated with deep ultraviolet lithography and dry etching. We have also made compactExpand
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Low-power, 2 x 2 silicon electro-optic switch with 110-nm bandwidth for broadband reconfigurable optical networks.
We present an ultra-broadband Mach-Zehnder based optical switch in silicon, electrically driven through carrier injection. Crosstalk levels lower than -17 dB are obtained for both the 'on' and 'off'Expand
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Basic structures for photonic integrated circuits in Silicon-on-insulator.
For the compact integration of photonic circuits, wavelength-scale structures with a high index contrast are a key requirement. We developed a fabrication process for these nanophotonic structures inExpand
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Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators.
Carrier-depletion based silicon modulators with lateral and interdigitated PN junctions are compared systematically on the same fabrication platform. The interdigitated diode is shown to outperformExpand
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56 Gb/s Germanium Waveguide Electro-Absorption Modulator
We report a Germanium waveguide electro-absorption modulator with electro-optic bandwidth substantially beyond 50 GHz. The device is implemented in a fully integrated Si photonics platform on 200 mmExpand
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Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit.
A compact, electrically driven light source integrated on silicon is a key component for large-scale integration of electronic and photonic integrated circuits. Here we demonstrate electricallyExpand
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An octave-spanning mid-infrared frequency comb generated in a silicon nanophotonic wire waveguide
Laser frequency combs, sources with a spectrum consisting of hundred thousands evenly spaced narrow lines, have an exhilarating potential for new approaches to molecular spectroscopy and sensing inExpand
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-1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond.
We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W atExpand
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Imec iSiPP25G silicon photonics: a robust CMOS-based photonics technology platform
We present imec’s silicon photonics active platform accessible through multi-project wafer runs. Expand
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