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Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers
Semiconductor lasers are the most efficient man-made narrow-band light sources and convert up to three-quarters of electric energy into light. High-power diode lasers are characterized by very highExpand
High-Power Broad-Area Diode Lasers and Laser Bars
This review presents the basic ideas and some examples of the chip technology of high-power diode lasers (λ = 650 nm − 1060 nm) in connection with the achievements of mounted single-stripe emittersExpand
The physics of catastrophic optical damage in high-power AlGaInP laser diodes
An innovative combination of concepts, namely microphotoluminescence (μPL) mapping, focused ion beam (FIB) microscopy, micro-Raman spectroscopy, and high-speed thermal imaging, was employed to revealExpand
Tunnel injection emitter structures with barriers comprising nanobridges
Nanobridges which bypass the tunnel barrier in tunnel injection structures are investigated. The conditions leading to the formation of confined states within them are determined. It is shown thatExpand
Transient luminescence of dense InAs/GaAs quantum dot arrays
Carrier transfer between quantum dots (QDs) in very dense InAs/GaAs QD arrays is studied by means of steady state and time-resolved photoluminescence spanning a wide range of laser power fromExpand
Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers
The facet heating of a single-quantum well InGaAs/AlGaAs broad-area high-power laser-diodes emitting at 940 nm was reduced by the introduction of a 30 μm long current blocking region located at theExpand
Optical and photoelectrical properties of oriented ZnO films
ZnO films that have been used as active layers of optically pumped lasers are investigated by a number of optical and photoelectric techniques, such as transmission, reflectivity, photoluminescenceExpand
Spectroscopic Analysis of Optoelectronic Semiconductors
This chapter gives an introduction to the basics of light-matter interaction in semiconductors, aiming to provide the readers with the background necessary to follow the other chapters of this book.Expand
InP quantum dots embedded in GaP: Optical properties and carrier dynamics
The optical emission and dynamics of carriers in Stranski-Krastanow self-organized InP quantum dots embedded in a GaP matrix are studied. InP deposited on GaP (001) using gas-source molecular-beamExpand
Spectroscopic strain measurement methodology: Degree-of-polarization photoluminescence versus photocurrent spectroscopy
A methodological approach to strain analysis in semiconductor devices is presented. Two methods, degree-of-polarization of photoluminescence and photocurrent spectroscopy, are compared by analyzing aExpand
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