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Scattering and Interference in Epitaxial Graphene
It is shown that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix and reflect both intravalley and intervalley scattering. Expand
Observing the Quantization of Zero Mass Carriers in Graphene
With the use of scanning tunneling spectroscopy of graphene grown on silicon carbide, the discrete, non-equally–spaced energy-level spectrum of LLs is observed, including the hallmark zero-energy state of graphene. Expand
Tunneling spectroscopy of the Si(111)2 × 1 surface
Abstract Using a scanning tunneling microscope, the tunneling current versus voltage is measured at fixed values of separation between a tungsten probe-tip and a Si(111)2 × 1 surface. RectificationExpand
Creating and probing electron whispering-gallery modes in graphene
Taking advantage of graphene’s gate-tunable light-like carriers, whispering-gallery mode (WGM) resonators defined by circular pn junctions are created, induced by a scanning tunneling probe, paving the way to develop electronic lenses and resonators. Expand
Tunneling spectroscopy of the GaAs(110) surface
The scanning tunneling microscope is used to study the spectroscopy of p‐type, n‐type, and oxygen‐covered GaAs(110) surfaces. On the clean surface, three components of the current areExpand
Microscopic polarization in bilayer graphene
Its tunable energy bandgap makes bilayer graphene interesting both from a theoretical perspective and with a view to applications. But exactly how the bandgap is formed is still unclear. A scanningExpand
Atomic and Molecular Manipulation with the Scanning Tunneling Microscope
Recent developments in scanning tunneling microscopy have made atom and molecular manipulation a reality; single atoms can be placed at selected positions and structures can be built to a particular design atom-by-atom. Expand
Evolution of microscopic localization in graphene in a magnetic field from scattering resonances to quantum dots
The effects of disorder on the electrical characteristics of graphene are found to change drastically in a magnetic field. At zero field, disorder simply causes charge scattering. But at high fieldsExpand
High-resolution tunnelling spectroscopy of a graphene quartet
High-resolution scanning tunnelling spectroscopy at temperatures as low as 10 mK in an applied magnetic field is used to study the top layer of multilayer epitaxial graphene, finding states with Landau level filling factors of 7/2, 9/2 and 11/2 suggestive of new many-body states in graphene. Expand
Invited review article: A 10 mK scanning probe microscopy facility.
The spectral resolution capabilities with tunneling spectroscopy results obtained on an epitaxial graphene sample resolving the quantum Landau levels in a magnetic field, including the sublevels corresponding to the lifting of the electron spin and valley degeneracies are shown. Expand