• Publications
  • Influence
Impact of Eddy Currents and Crowding Effects on High-Frequency Losses in Planar Schottky Diodes
  • A. Tang, J. Stake
  • Materials Science
  • IEEE Transactions on Electron Devices
  • 1 August 2011
In this paper, we present the influence of eddy currents, skin and proximity effects on high-frequency losses in planar terahertz Schottky diodes. The high-frequency losses, particularly losses dueExpand
  • 51
  • 4
A Subharmonic Graphene FET Mixer
We demonstrate a subharmonic resistive graphene FET mixer utilizing the symmetrical channel-resistance versus gate-voltage characteristic. A down-conversion loss of 24 dB is obtained with fRF = 2Expand
  • 92
  • 3
A Large-Signal Graphene FET Model
We propose a semi-empirical graphene field-effect-transistor (G-FET) model for analysis and design of G-FET-based circuits. The model describes the current-voltage characteristic for a G-FET over aExpand
  • 73
  • 3
  • PDF
A 30-GHz Integrated Subharmonic Mixer Based on a Multichannel Graphene FET
A 30-GHz integrated subharmonic mixer based on a single graphene field-effect transistor (G-FET) has been designed, fabricated, and characterized. The mixer is realized in microstrip technology on aExpand
  • 66
  • 3
  • PDF
Heterostructure-barrier-varactor design
In this paper, we propose a simple set of accurate frequency-domain design equations for calculation of optimum embedding impedances, optimum input power, bandwidth, and conversion efficiency ofExpand
  • 63
  • 3
  • PDF
Hydrodynamic Simulations of Unitraveling-Carrier Photodiodes
We present simulated results of a unitraveling-carrier photodiode (UTC-PD) using the hydrodynamic carrier transportation model. A maximum responsivity of 0.25 A/W and a small-signal 3-dB bandwidth ofExpand
  • 15
  • 3
Analytical Extraction of a Schottky Diode Model From Broadband $S$ -Parameters
<?Pub Dtl?>We present an analytic method to extract Schottky diode parasitic model parameters. All the ten unknown model parameters are extracted via a straightforward step-by-step procedure. TheExpand
  • 54
  • 2
A Room Temperature Bolometer for Terahertz Coherent and Incoherent Detection
We present a novel room temperature bolometer with nanosecond response that can be used both for coherent and incoherent detection through the entire terahertz frequency range. A responsivity of upExpand
  • 42
  • 2
Electro-Thermal Model for Multi-Anode Schottky Diode Multipliers
We present a self-consistent electro-thermal model for multi-anode Schottky diode multiplier circuits. The thermal model is developed for an n-anode multiplier via a thermal resistance matrixExpand
  • 37
  • 2
Microwave noise characterization of graphene field effect transistors
The microwave noise parameters of graphene field effect transistors (GFETs) fabricated using chemical vapor deposition graphene with 1  μm gate length in the 2 to 8 GHz range are reported. TheExpand
  • 35
  • 2
  • PDF
...
1
2
3
4
5
...