• Publications
  • Influence
Evaluation of the fundamental properties of quantum dot infrared detectors
The physical properties of detectors based on intraband optical absorption in quantum dots is described and examined in the interest of providing a competitive alternative infrared (IR) detectorExpand
Intermediate-band photovoltaic solar cell based on ZnTe:O
Oxygen doping in ZnTe is applied to a junction diode in the aim of utilizing the associated electron states 0.5 eV below the bandedge as an intermediate band for photovoltaic solar cells. The ZnTe:OExpand
AlGaAs Photovoltaics for Indoor Energy Harvesting in mm-Scale Wireless Sensor Nodes
Indoor photovoltaic energy harvesting is a promising candidate to power millimeter (mm)-scale systems. The theoretical efficiency and electrical performance of photovoltaics under typical indoorExpand
Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion
The electronic structure and thermal carrier capture and escape mechanisms are studied for GaSb/GaAs quantum dots with a type-II band alignment using admittance spectroscopy. Clear signatures areExpand
In(Ga)As/GaAs self-organized quantum dot lasers: DC and small-signal modulation properties
Self-organized growth of InGaAs/GaAs strained epitaxial layers gives rise to an ordered array of islands via the Stranski-Krastanow growth mode, for misfits >1.8%. These islands are pyramidal inExpand
Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors
Quantum-dot infrared photodetectors (QDIPs) are being studied extensively for mid-wavelength and long-wavelength infrared detection because they offer normal-incidence, high-temperature,Expand
Optical Characteristics of ZnTeO Thin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy
Oxygen incorporation into ZnTe was studied using pulsed laser deposition and molecular beam epitaxy. Oxygen incorporation at the high partial pressures studied for pulsed laser deposition was foundExpand
Hysteretic metal–ferroelectric– semiconductor capacitors based on PZT/ZnO heterostructures
Interfacing of ferroelectric and semiconductor materials provides a means of coupling unique properties associated with ferroelectric materials to high performance semiconductor devices. In this workExpand
A DC Voltage Dependant Switchable Thin Film Bulk Wave Acoustic Resonator Using Ferroelectric Thin Film
In this paper, a new application of ferroelectric thin film based on electrostrictive and piezoelectric effects is reported. Electrostrictive resonances in the thin film can be controlled with theExpand
SMALL-SIGNAL MODULATION AND DIFFERENTIAL GAIN OF SINGLE-MODE SELF-ORGANIZED IN0.4GA0.6AS/GAAS QUANTUM DOT LASERS
We report small-signal modulation bandwidth and differential gain measurements of a single-layer self-organized In0.4Ga0.6As/GaAs quantum dot laser grown by molecular beam epitaxy. The 3 dB bandwidthExpand
...
1
2
3
4
5
...