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- J. Nishizawa, Tetsuya Terasaki, Junichi Shibata
- IEEE Transactions on Electron Devices
- 1975
The reason why the usual FET shows the saturated characteristics has been shown that with increasing drain voltage, the effect of the negative feedback action, increases through a marked increase of… (More)
- Y. Mochida, J. Nishizawa, Tadahiro Ohmi, R.K. Gupta
- IEEE Transactions on Electron Devices
- 1978
It is established experimentally that the I-V characteristics of a static induction transistor (SIT) and their temperature dependence are consistent with a major current transport mechanism of… (More)
- J. Nishizawa, Tadahiro Ohmi, Hsiao-Liang Chen
- IEEE Transactions on Electron Devices
- 1982
The three-dimensional effect of the potential profile in the channel of a bipolar-mode SIT (BSIT) is analytically discussed by using a very simple model. The basic performance of a BSIT is… (More)
- J. Nishizawa, Tadahiro Ohmi, Y. Mochida, Taizo Matsuyama, Shoji Iida
- 1978 International Electron Devices Meeting
- 1978
Junction type static induction transistor is designed as normally-off device, called as bipolar mode static induction transistor (BSIT), where the channel is completely pinched off by the gate to… (More)
- J. Nishizawa, B. Wilamowski
- 1977 IEEE International Solid-State Circuits…
- 1977
SOLID-STATE CIRCUITS are designed to minimize both delay time and operational power. The product of these is thought t o be constant, represented by a specific figure for each type of integrated… (More)
- J. Nishizawa, K. Motoya, Yoshinobu Okuno
- 1978 IEEE-MTT-S International Microwave Symposium…
- 1978
The Tunnel injection transit time (Tunnett) diode operates in higher frequency region and with lower noise level than that of the Impatt diode. In thin carrier generating region, the tunnel injection… (More)
- K. Motoya, Yoshinobu Okuno, J. Nishizawa
- 1978 8th European Microwave Conference
- 1978
The tunnel injection increases steeply by the electric field intensity over 1000 kV/cm and the thickness of the tunnel injection region less than 100 Å is suitable for the injection responsible above… (More)
- J. Nishizawa, Toshihiko Nonaka, Y. Mochida, Tadahiro Ohmi
- Fifth European Solid State Circuits Conference…
- 1979
Static induction transistor (SIT) (Nishizawa et al (1), Nishizawa and Yamamoto (2) and Mochida et al (3)) has been applied to I^L cir¬ cuit technology The I^L equivalent static induction transistor… (More)
- J. Nishizawa, T. Tamamushi, Kiyoe Nonaka, Shigeaki Suzuki
- IEEE Electron Device Letters
- 1985
This letter describes a new phototransistor based on the static induction transistor (SIT) structure. A D/C optical gain and a gain-bandwidth product of a fundamental normally-on type static… (More)
- J. Nishizawa, Kazuo Yamamoto
- IEEE Transactions on Electron Devices
- 1978
The principal operating mechanism of the static induction transistor (SIT) that shows exponential rather than the saturatedI-Vcharacteristics, is based on the static induction of both gate and drain… (More)