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Germanium photodetector integrated in a Silicon-On-Insulator microwaveguide
Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported. A responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias haveExpand
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20 THz broadband generation using semi-insulating GaAs interdigitated photoconductive antennas.
We demonstrate broadband (20 THz), high electric field, terahertz generation using large area interdigitated antennas fabricated on semi-insulating GaAs. The bandwidth is characterized as a functionExpand
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Comparison of light- and heavy-ion-irradiated quantum-wells for use as ultrafast saturable absorbers
We have compared light- and heavy-ion irradiation of InGaAs/InAlAs multiple-quantum wells for ultrafast saturable absorption applications. Under heavy-ion impacts, defect clusters were produced, asExpand
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THz Photoconductive Antennas Made From Ion-Bombarded Semiconductors
We review the most important developments in the technology of THz photoconductive antennas made from ion-bombarded semiconductors. We describe the structural, optical and electrical properties ofExpand
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Ultrafast response (∼2.2 ps) of ion-irradiated InGaAs photoconductive switch at 1.55 μm
A 2.2 ps full-width-at-half-maximum impulse response is measured for ion-irradiated InGaAs photoconductive switches triggered by ultrashort 1.55 μm laser pulses. Correspondingly, the −3 dB bandwidthExpand
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Ion-irradiated In0.53Ga0.47As photoconductive antennas for THz generation and detection at 1.55 μm wavelength
Abstract We present a detailed study of the photoconductive antennas made from heavy-ion-irradiated In0.53Ga0.47As material. The optical and transport properties of ion-irradiated In0.53Ga0.47AsExpand
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Subwavelength metallic waveguides as a tool for extreme confinement of THz surface waves
Research on surface waves supported by metals at THz frequencies is experiencing a tremendous growth due to their potential for imaging, biological sensing and high-speed electronic circuits.Expand
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42 GHz waveguide germanium-on-silicon vertical PIN photodetector
High speed, high responsivity and reliable CMOS compatible photodetectors are key elements for low cost telecommunications systems at 1.55 mum. A 42 GHz germanium on silicon vertical PINExpand
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Coupling Surface Plasmon Polariton Modes to Complementary THz Metasurfaces Tuned by Inter Meta‐Atom Distance
The authors study the interaction of complementary terahertz (THz) split ring resonators with THz surface plasmon polaritons (SPPs) as a function of the meta-atom distance. The THz transmissionExpand
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System application of 1.5 /spl mu/m ultrafast saturable absorber in 10 Gbit/s long-haul transmission
A semiconductor saturable absorber based on a heavy-ion-irradiated quantum well vertical cavity is implemented In a 10 Gbit/s RZ loop transmission. Induced reduction of amplified spontaneous emissionExpand
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