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Optical Waveform Sampling and Error-Free Demultiplexing of 1.28 Tb/s Serial Data in a Nanoengineered Silicon Waveguide
This paper presents the experimental demonstrations of using a pure nanoengineered silicon waveguide for 1.28 Tb/s serial data optical waveform sampling and 1.28 Tb/s-10 Gb/s error-freeExpand
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Spectral hole-burning and carrier-heating dynamics in InGaAs quantum-dot amplifiers
The ultrafast gain and index dynamics in a set of InAs-InGaAs-GaAs quantum-dot (QD) amplifiers are measured at room temperature with femtosecond resolution. The role of spectral hole-burning (SHB)Expand
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Ultrafast gain dynamics in quantum-dot amplifiers: theoretical analysis and experimental investigations
Ultrafast gain dynamics in an optical amplifier with an active layer of self-organized quantum dots (QDs) emitting near 1.3 /spl mu/m is characterized experimentally in a pump-probe experiment andExpand
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Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers
The ultrafast dynamics of gain and refractive index in an electrically pumped InAs-InGaAs quantum-dot (QD) optical amplifier are measured at room temperature using differential transmission withExpand
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Low-jitter and high-power 40-GHz all-active mode-locked lasers
A novel design strategy for the epitaxial structure of monolithic mode-locked semiconductor lasers is presented. Using an all-active design, we fabricate 40-GHz lasers generating 2.8-ps almostExpand
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Size dependence of the wavefunction of self-assembled InAs quantum dots from time-resolved optical measurements
The radiative and nonradiative decay rates of InAs quantum dots are measured by controlling the local density of optical states near an interface. From time-resolved measurements, we extract theExpand
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High-performance 10 GHz all-active monolithic modelocked semiconductor lasers
Using a novel design strategy for the epitaxial structure for monolithic modelocked semiconductor lasers, lasers capable of producing <2 ps pulses at 10 GHz with very low high-frequency jitter haveExpand
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Gain dynamics and saturation in semiconductor quantum dot amplifiers
Quantum dot (QD)-based semiconductor optical amplifiers offer unique properties compared with conventional devices based on bulk or quantum well material. Due to the bandfilling properties of QDs andExpand
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Measurement of pulse amplitude and phase distortion in a semiconductor optical amplifier: from pulse compression to breakup
We have performed extensive measurements of the propagation of ultrashort pulses in a semiconductor bulk amplifier using an ultrasensitive cross frequency-resolved optical gating technique. Pulses ofExpand
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Silicon-on-insulator polarization splitting and rotating device for polarization diversity circuits.
A compact and efficient polarization splitting and rotating device built on the silicon-on-insulator platform is introduced, which can be readily used for the interface section of a polarizationExpand
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