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Metal-oxide-semiconductor (MOS) capacitors with metal-gate/high-<i>k</i> dielectric stacked films are a promising candidate to provide enhanced device performance. To study these issues, a(More)
Hafnium and lanthanum-based high-dielectric-constant (high-k) dielectrics with good thermal stability, wide bandgaps, and large band offsets, have been focused to meet the urgent need for advanced(More)
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